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By Richard J. Borg and G. J. Dienes (Auth.)
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Extra resources for An Introduction to Solid State Diffusion
1) is the specific resistance, p,, times the appropriate fraction, n of the defects or impurities with the exception of p„, which is the intrinsic temperature dependent resistance arising from lattice vibra tions. 2 K, the boiling point of liquid H e , which is the usual temperature at which the resistance measurements are made. If the experiment is conducted properly, η and η remain constant, whereas n increases with temperature. Although n represents the sum of both interstitial and vacancy defects, the former have such small concentrations owing to their large free energies of formation that n can be replaced without serious error by n , the concentration of vacancies.
W. Siegel, in Properties of Atomic Defects in Metals: Proc. ΙηίΊ. Conf. on Properties of Atomic Defects in Metals, N o r t h Holland Pub. Co. 1978 [reprinted from J. , Vols. 6 9 - 7 0 (1978)], p. 117-146. A good review and overview of experimental methods used to determine vacancy concentrations in metals; very large bibliography. W. Schilling, in Properties of Atomic Defects in Metals: Proc. ΙηίΊ. Conf. on Properties of Atomic Defects in Metals, N o r t h Holland Pub. Co. 1978, p . 4 6 5 - 4 8 9 .
Schilling, in Properties of Atomic Defects in Metals: Proc. ΙηίΊ. Conf. on Properties of Atomic Defects in Metals, N o r t h Holland Pub. Co. 1978, p . 4 6 5 - 4 8 9 . A n excellent discussion of all the various p h e n o m e n a which affect the properties of self interstitial atoms, such as relaxation volumes, elastic polarizabilities, defect vibrations, geometry of j u m p processes, a n d elastic interactions. Includes an extensive bibliography. [Reprinted from J. , Vols. 6 9 - 7 0 (1978)].
An Introduction to Solid State Diffusion by Richard J. Borg and G. J. Dienes (Auth.)